Modelling single electron transfer in Si:P double quantum dots
نویسندگان
چکیده
منابع مشابه
Single electron transport in quantum dots
We review our experimental study on the electron transport in quantum dots, formed in the two-dimensional electron gas in GaAs/AlGaAs heterostructures. Single electron transport with well-resolved zero-dimensional energy levels is described for both single and coupled quantum dots. Effects of microwave irradiation are also studied, and photon assisted tunneling was observed between two discrete...
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Electron transport experiments on two lateral quantum dots coupled in series are reviewed. An introduction to the charge stability diagram is given in terms of the electrochemical potentials of both dots. Resonant tunneling experiments show that the double dot geometry allows for an accurate determination of the intrinsic lifetime of discrete energy states in quantum dots. The evolution of disc...
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For coherent electron spins, hyperfine coupling to nuclei in the host material can either be a dominant source of unwanted spin decoherence1–3 or, if controlled effectively, a resource enabling storage and retrieval of quantum information4–7. To investigate the effect of a controllable nuclear environment on the evolution of confined electron spins, we have fabricated and measured gate-defined ...
متن کاملDetermination of energy scales in few-electron double quantum dots.
The capacitive couplings between gate-defined quantum dots and their gates vary considerably as a function of applied gate voltages. The conversion between gate voltages and the relevant energy scales is usually performed in a regime of rather symmetric dot-lead tunnel couplings strong enough to allow direct transport measurements. Unfortunately, this standard procedure fails for weak and possi...
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We recently predicted that the interatomic Coulombic electron capture (ICEC) process, a long-range electron correlation driven capture process, is achievable in gated double quantum dots (DQDs). In ICEC an incoming electron is captured by one quantum dot (QD) and the excess energy is used to remove an electron from the neighboring QD. In this work we present systematic full three-dimensional el...
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ژورنال
عنوان ژورنال: Nanotechnology
سال: 2004
ISSN: 0957-4484,1361-6528
DOI: 10.1088/0957-4484/16/1/016